Working Time: 9:30-18:00
2025 The 10th International Conference on Integrated Circuits and Microsystems
    Email: icicm_conf@vip.163.com
    Secretary: Ms. Mila Xiao(肖老师)

Track 13: Radiation Sensors, Readout Circuits and Radiation Harden by Design

辐射探测器读出电路与辐射加固设计

Organizers / 组织者

Jia Wang 王佳
Northwestern Polytechnical University, China
Associate Professor
Ruiguang Zhao 赵瑞光
Northwestern Polytechnical University, China
Assistant Professor

Abstract / 论坛简介

Radiation exists in both natural environment and man-engineered applications, including cosmic rays, soils, solar radiation and nuclear power plants. Particles or rays can interact with material, such as high-purity germanium, silicon, cadmium zinc telluride, scintillators and so on, and generate electron-hole pairs or light, resulting in particles detection. Radiation sensors are widely used in high-energy physics experiments, astronomical exploration,nuclear security screening and medical imaging. Radiation sensing has garnered increasing attention, driven by advancements in fundamental scientific theories and practical engineering requirements.. Moreover, the high-energy particles may destroy the silicon grid, inducing circuit performance degradation, malfunction or destruction. Thus, radiation hardened by design is essential for the chips used in high-energy physics experiment, space environments. This track will focus on the radiation sensor, readout circuit, AI used for signal processing, radiation hardened by design and so on.

辐射存在于自然环境和人工应用中,包括宇宙射线、土壤、太阳辐射和核电站等。粒子或射线可以与材料相互作用,如高纯锗、硅、碲锌镉、闪烁体等,并产生电子-空穴对或光,从而实现粒子检测。辐射传感器广泛应用于高能物理实验、天文探索、核安全筛查和医学成像等领域。随着基础科学理论和实际工程需求的进步,辐射传感技术受到越来越多的关注。此外,高能粒子可能破坏硅晶格,导致电路性能下降、故障或损坏。因此,辐射加固设计对于用于高能物理实验和太空环境的芯片至关重要。本专题将聚焦于辐射传感器、读出电路、用于信号处理的人工智能、辐射加固设计等方面。

Topics / 主题范围

Radiation sensors / 辐射传感器
Front-end readout ASIC / 前端读出专用集成电路
AI for signal processing / 用于信号处理的人工智能
Monolithic Active Pixel Sensors / 单片有源像素传感器
DC/DC, LDO / 直流转换器,低压差线性稳压器
Verification method / 验证方法
Radiation Hardened by Design / 辐射加固设计

Invited Speakers / 特邀报告人

Manwen Liu 刘曼文
Institute of Microelectronics, Chinese Academy of Sciences / 中科院微电子所